Method of producing photomask and exposing

Details Method of producing photomask and exposing Method of producing photomask and exposing

1996-05-16

1998-03-03

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430394, G03F 900

Patent

active

057232350

ABSTRACT:
A photomask, a method of producing the same, a method of exposing using the same and a method of manufacturing a semiconductor device using the same are disclosed, which permit correlation to be found out with respect to a large number of mask condition parameters, thus permitting optimum condition to be obtained such as to be less aloof from the actual process, permits quantitative grasping of performance, permits reduction of time and cost, and permits effects of mask pattern size fluctuations, etc. into considerations.
Either defocus latitude, mask pattern size latitude II and exposure latitude I is combined with pluralities of data in predetermined ranges of the other two latitudes I and II to determine the permissible range of the first-noted latitude III for optimum value determination.

REFERENCES:
patent: 5316896 (1994-05-01), Fukuda et al.
Bachvan Huynh, et al., "Optical Printability of Defects in Two-Dimensional Patterns", J.Vac.Sci.Technol., vol. B6, No. 6, Nov./Dec. 1988, pp. 2207-2212.
Kazuya Kadota, et al., "Analysis for Effects of Mask Defects to Resist Pattern Using a Three-Dimensional Photolithography Simulator", J.Vac.Sci.Technol., vol. B8, No. 5, Sep./Oct. 1990, pp. 1080-1086.

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