Semiconductor integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays

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Details

257208, 257211, 257758, H01L 2702, H01L 2710, H01L 2348, H01L 2946

Patent

active

052371840

ABSTRACT:
A semiconductor integrated circuit of the present invention features that a voltage is stably applied to a cell for high-speed operation and the number of lengthy wirings which run around a cell row is reduced without increasing a chip area, so that line efficiency can be improved. Since a power source line 16 and a ground line 17, each having a wide line running width, are formed on a top line layer above a cell 1 so as to cover nearly the whole surface of the cell 1, electrical resistance of the power source line 16 and the ground line 17 is reduced and then the voltage applied to the cell for high-speed operation is stabilized and such design is enabled without increasing the chip area. In addition, since penetrating lines 18 and 19 are formed on the lower line layer on a border between the cells, the number of lengthy lines which run around the cell row can be reduced by using the penetrating lines 18 and 19 as connecting between cells, so that line efficiency can be improved.

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