Semiconductor device having buried insulating layer

Details Semiconductor device having buried insulating layer Semiconductor device having buried insulating layer

1978-03-02

1980-12-23

Munson, Gene M.

357 23, 357 34, 357 56, 357 91, 29571, H01L 2712, H01L 2978, H01L 2906

Patent

active

042413591

ABSTRACT:
A semiconductor manufacturing method and device made therefrom by forming an insulating SiO.sub.2 film on both surfaces of a silicon substrate using an ion implantation process to form a buried SiO.sub.2 layer within the substrate a predetermined depth beneath one of the substrate surfaces, isolating a body of the substrate layer lying above the buried layer, and forming a semiconductive device in the isolated body. The surface layers of SiO.sub.2 serve to mechanically balance the internal strains generated within the substrate during the formation of the buried layer and thereby prevent the creation of mechanical imperfections in the surface portions of the substrate.

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patent: 4017341 (1977-04-01), Suzuki

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