Semiconductor memory device with redundant memory cell

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365200, 36523001, G11C 700

Patent

active

048624160

ABSTRACT:
A semiconductor memory device has a redundant memory cell, wherein faulty memory cells are replaced with redundant memory cells during the production. The memory device comprises a forced release circuit for releasing the replacement with the redundant memory cells, for example, by applying a voltage different from the normal voltage to one terminal of the device. Thus, the faulty state, and the cause of the fault, of the device can be determined.

REFERENCES:
patent: 4428068 (1984-01-01), Baba
patent: 4463450 (1984-07-01), Haeusele

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