Shallow trench isolation formation with deep trench cap

Details Shallow trench isolation formation with deep trench cap Shallow trench isolation formation with deep trench cap

1995-06-29

1999-04-20

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438700, 438705, 438945, H01L 2176

Patent

active

058952551

ABSTRACT:
A composite body includes a semiconductor substrate having an oxide layer formed thereon and a nitride layer formed over the oxide layer. First and second deep trench configurations are formed in the composite body. To form a shallow isolation trench between the first and second deep trench configurations, intrinsic polysilicon upper layers of the first and second deep trench configurations and the nitride layer are planarized. A titanium layer is formed over the planarized composite body and caused to react with the intrinsic polysilicon upper layers to form first and second titanium silicide caps over the first and second deep trench configurations. A masking layer is formed over the composite body such that an opening exposes the region between the first and second deep trench configurations. An etching step that is selective to titanium silicide is then performed with the first and second deep trench caps serving as masks. Accordingly, a shallow trench is formed in the region between the first and second trench configurations. The masking layer and the first and second deep trench caps are removed, and oxide and nitride linings are formed over the first and second deep trench configurations and over the surfaces of the shallow trench to prevent oxidation.

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