Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1992-12-08
1995-03-28
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117 88, 117919, 117929, C30B 2904
Patent
active
054007380
ABSTRACT:
A single crystal diamond film having good crystallinity and electrical and optical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas, a carbon containing compound and an oxygen-containing compound and growing a single crystal diamond film on a substrate in a vapor phase.
REFERENCES:
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"Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films"; Gildenblatt et al; Appl. Phys. Letts. 53(7); Aug. 15, 1988; pp. 586-588.
"High Temperature Point-Contact Transistors and Schottky diodes Formed on Synthetic Boron-Doped Diamond"; Geis, et al.; IEEE Electron Device Letters, vol. EDL-8, No. 8; Aug. 1987; pp. 341-343.
"High Temperature Schottky Diodes With Boron-Doped Homoepitaxial Diamond Base"; Glidenblat et al; Mat. Res. Bull., vol. 25 pp. 129-134 (1990).
T. Kawato et al., Effects of Oxygen on "CUD Diamond Synthesis", Japanese Journal of Applied Physics, vol. 26, No. 9, (Sep. 1987) pp. 1429-1432.
C.-P. Chang, "Diamon Crystal Growth by Plasma Chemical Vapor Deposition", Journal of Applied Physics vol. 63, No. 5, (Mar. 1, 1988), pp. 1744-1748.
N. Fujimori et al. "Characterization of Conducting Diamond Films", Vacuum, vol. 36, No. 1-3, (1986), pp. 99-102.
Fujimori Naoji
Imai Takahiro
Shiomi Hiromu
Breneman R. Bruce
Garrett Felisa
Sumitomo Electric Industries Ltd.
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