Manufacturing method of metal-insulator-semiconductor device usi

Details Manufacturing method of metal-insulator-semiconductor device usi Manufacturing method of metal-insulator-semiconductor device usi

1992-08-10

1993-08-17

Fourson, George

Fishing, trapping, and vermin destroying

437 69, H01L 2176

Patent

active

052368610

ABSTRACT:
A method of manufacturing a metal-insulator-semiconductor (MIS) device in which a gate electrode is formed to cover the upper portion of a device forming region which is isolated by a trench is comprised of a step of forming a laminated film including at least an oxidation proof film on a substrate, a step of selectively removing parts of the laminated film and a part of the substrate beneath the laminated film to thereby form a trench in the substrate, a step of burying an insulation film in the trench, and a step of performing a selective oxidation on the entire surface of the insulation film.

REFERENCES:
Wolf, S., et al, Silicon Processing for the VLSI Era, vol. 2, 1990, pp. 51-58 & 419-426.

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