Compound semiconductor device and method for fabrication thereof

Details Compound semiconductor device and method for fabrication thereof Compound semiconductor device and method for fabrication thereof

1991-12-26

1993-08-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

257 24, 437974, 437958, 437927, 437203, H01L 29161

Patent

active

052368548

ABSTRACT:
A compound semiconductor device including a field effect transistor particularly suited for high frequency applications such as grounded source applications. An active layer is formed on one surface of a compound semiconductor substrate. An aperture is dry etched through the second surface of the semiconductor substrate toward the first surface, and terminates in the source region of the active layer. The walls of the aperture are metallized as is the second surface of the substrate. A gate electrode and at least a drain electrode are formed on the first surface. The metallized second surface can act as a source electrode by virtue of ohmic contact between the metallized walls of the aperture and the source region of the active layer.

REFERENCES:
patent: 3969745 (1976-07-01), Blocker
patent: 4456888 (1984-06-01), Ayasli
patent: 4507845 (1985-04-01), McIver et al.
patent: 4537654 (1985-08-01), Berenz et al.
patent: 4868613 (1989-09-01), Hirachi
patent: 4893155 (1990-01-01), Ohata
patent: 4935789 (1990-06-01), Calvielle
patent: 4951099 (1990-08-01), Berenz et al.
"High Performance Monolithic Power Amplifier Using All RIE Etch Process," Chi et al., 1987 IEEE, GaAs IC Symposium, pp. 159-162.
"GAAs MMIC Evaluation of Via Fracturing," Pavio et al., 1988 IEEE, GaAs IC Symposium, pp. 305-307.

Affiliated with

Also associated with

Rating

Compound semiconductor device and method for fabrication thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor device and method for fabrication thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device and method for fabrication thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2243414