Semiconductor device having Schottky barrier between metal silic

Details Semiconductor device having Schottky barrier between metal silic Semiconductor device having Schottky barrier between metal silic

1988-08-03

1989-08-29

Hille, Rolf

357 71, 357 15, H01L 2964, H01L 2956, H01L 2962

Patent

active

048622443

ABSTRACT:
A semiconductor device having a Schottky barrier junction formed between a metal silicide layer and a monocrystalline silicon layer is disclosed. A polycrystalline silicon layer is formed so as to make a contact with a portion of the surface of the monocrystalline silicon layer and is further elongated over an insulation film which selectively covers the surface of the monocrystalline silicon layer. The metal silicide layer has a first portion making contact with the monocrystalline silicon layer to form the Schottky barrier junction and further has a second portion covering the polycrystalline silicon layer. The second portion of the metal silicide layer and the polycrystalline silicon layer are employed for interconnect the Schottky barrier junction to another or other circuit elements.

REFERENCES:
patent: 3668481 (1972-06-01), Saltich et al.
patent: 3907617 (1975-09-01), Zwernemann
patent: 4377031 (1983-03-01), Goto et al.
patent: 4441931 (1984-04-01), Levin
patent: 4518981 (1985-05-01), Schlupp
"Modified Polysilicon Emitter Process", Barson, IBM Tech. Disclosure, vol. 22, No. 9, Feb. 1980, pp. 4052-4053.

Affiliated with

Also associated with

Rating

Semiconductor device having Schottky barrier between metal silic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having Schottky barrier between metal silic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having Schottky barrier between metal silic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2243116