Transistors

Details Transistors Transistors

1983-04-22

1989-08-29

Larkins, William D.

357 4, 357 13, 357 15, 357 16, H01L 2972

Patent

active

048622389

ABSTRACT:
A hot-electron or hot-hole transistor includes a base region through which current flow is by hot majority charge carriers. The emitter-base barrier-forming means comprises a barrier region having a sufficiently large thickness and impurity concentration of the opposite conductivity type that the barrier region is at least over part of its thickness undepleted by the depletion layer or layers present at the emitter-base barrier at zero bias. The application of a bias voltage (V.sub.BE) between the base and emitter of the transistor is necessary to establish a supply of the hot majority carriers having energies above the base-collector barrier, and this improves the collection efficiency of the transistor. In one form the emitter-base barrier-forming means also comprises a Schottky contact. In another form the emitter comprises an ohmic contact. The supply of hot majority carriers may be established by avalanche or zener breakdown of the barrier region or by punch-through of the depletion layer(s). A low emitter capacitance can be obtained by including between the emitter contact and the barrier region a lower-doped zone of either conductivity type so as to spread further the depletion layer(s) at the emitter-base barrier. The base-collector barrier can be formed by a fully depleted barrier region. The transistor structure can be formed using ion-implantation or/and molecular beam epitaxy.

REFERENCES:
patent: 3121809 (1964-02-01), Atalla
patent: 3940783 (1976-02-01), Polata
patent: 4127861 (1978-11-01), Deneuville
patent: 4149174 (1979-04-01), Shannon

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