Transistor structure for high temperature logic circuits with in

Details Transistor structure for high temperature logic circuits with in Transistor structure for high temperature logic circuits with in

1986-09-22

1989-08-29

James, Andrew J.

357 49, 357 50, 357 42, 357 233, H01L 2978

Patent

active

048622320

ABSTRACT:
A high temperature logic field effect transistor. By surrounding the source and drain pn junctions with electrically insulative material, except where a channel runs between the source and drain, a logic field effect transistor whose on/off current ratio can still have a high value at high temperatures. The transistor can be of any standard MOS technology, such as pMOS, nMOS, or CMOS.

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