Method of forming metal silicide interconnection electrodes in I

Details Method of forming metal silicide interconnection electrodes in I Method of forming metal silicide interconnection electrodes in I

1980-11-07

1983-05-31

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 15, 357 67, 357 91, C23F 102, B01J 1700

Patent

active

043854338

ABSTRACT:
An exposed surface of a semiconductor substrate with an integrated injection logic semiconductor region having a first conductivity injector region of which one surface is exposed, a first conductivity type base region of which part of the surface is exposed, and a second conductivity type collector region of which one surface is exposed and the remaining surfaces are surrounded by the base region, is covered with SiO.sub.2. Contact holes are holed in the SiO.sub.2 layer at the locations facing the injector regions, the base regions and the collector region. Through the contact holes, first conductivity type ions are injected into the semiproduct of the semiconductor device. As a result, the surface impurity concentrations of the injector region, the base region and the collector region are 1.times.10.sup.19 /cm.sup.3 or more. Interconnection electrodes of, for example, MoSi.sub.2 make ohmic contact with the respective regions.

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