Forming self-guarded p-n junctions by epitaxial regrowth of amor

Details Forming self-guarded p-n junctions by epitaxial regrowth of amor Forming self-guarded p-n junctions by epitaxial regrowth of amor

1978-05-23

1980-12-23

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 219121L, 357 13, 357 20, 357 91, H01L 21263, H01L 2126

Patent

active

042408431

ABSTRACT:
The specification describes structures, and methods for making them, in which self-guarded p-n junctions or the electrical isolation between multiple devices in an integrated circuit are formed using regions of amorphous semiconductor. The structures are conveniently formed by ion damaging the semiconductor to form the amorphous region and annealing selected portions of the amorphous region by selective radiation annealing.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3589949 (1971-06-01), Nelson
patent: 3771026 (1973-11-01), Asai et al.
patent: 3900345 (1975-08-01), Lesk
patent: 4059461 (1977-11-01), Fan et al.
patent: 4133704 (1979-01-01), MacIver et al.
patent: 4154625 (1979-05-01), Golovchenko et al.
patent: 4155779 (1979-05-01), Auston et al.
Campisano et al., "Laser Reordering . . . Amorphous Layers . . . " Solid St. Electronics, (Feb. 78) vol. 21, 485
Klimenko et al., "Laser . . . Restoration . . . Single Xfal" Sov. J. Quant. Electron. vol. 5 (1976) 1289
Csepregi et al., "Reordering . . . Amorphous Layers . . . " J. Appl. Phys. 48 (1977) 4234.
Vitali et al., "Surface . . . Changes by Laser . . . " Phys. Letts. 63A (1977) 351.
Csepregi et al., ". . . Recrystallization . . . Si Layers . . . " Phys. Letts. 54A (1975) 157.
Glowinski et al., ". . . Defects in Implanted . . . Si . . . " Appl. Phys. Letts. 28 (1976) 312.
Foti et al., ". . . Laser Annealing . . . Si . . . " Appl. Phys. 15 (1978, Apr.) 365.
Yasaitis, "Ion Impl." Planar Amorphous Isolaton.

Affiliated with

Also associated with

Rating

Forming self-guarded p-n junctions by epitaxial regrowth of amor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming self-guarded p-n junctions by epitaxial regrowth of amor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming self-guarded p-n junctions by epitaxial regrowth of amor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2240909