Patent
1974-05-03
1976-05-18
James, Andrew J.
H01L 2974
Patent
active
039582680
ABSTRACT:
A thyristor highly proof against dv/dt in which to prevent malignition due to the displacement current produced by the application of an abruptly rising forward voltage or the internal leakage current increasing with the temperature rise of the semiconductor substrate, an auxiliary electrode is provided to the intermediate region adjacent to one of the outermost regions of the semiconductor substrate to which two main electrodes, anode and cathode, are provided, the auxiliary electrode and the main electrode on the one outermost region being connected electrically, and a control region having the opposite conductivity type to that of the intermediate region is formed in the intermediate region between the auxiliary electrode and the main electrode on the one outermost region, the control region being provided with a gate electrode. By supplying a control signal to the gate electrode a depletion layer is produced in the intermediate region such that the path of the control signal from the gate electrode to the auxiliary electrode is completely blocked and the control signal is all utilized for the ignition. The displacement current and the leakage current are bypassed from the auxiliary electrode to the main electrode on the one outermost region.
REFERENCES:
patent: 3524114 (1970-08-01), Hutson
patent: 3524115 (1970-08-01), Herlet
patent: 3577046 (1971-05-01), Moyson
patent: 3662233 (1972-05-01), Clerc et al.
Hosokawa Yoshikazu
Kamei Tatsuya
Hitachi , Ltd.
James Andrew J.
Wojciechowicz E.
LandOfFree
Thyristor highly proof against time rate of change of voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thyristor highly proof against time rate of change of voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thyristor highly proof against time rate of change of voltage will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2240378