Semiconductor device

Details Semiconductor device Semiconductor device

1978-08-18

1979-03-20

Wojciechowicz, Edward J.

357 23, 357 41, 357 46, H01L 2710

Patent

active

041457013

ABSTRACT:
In a large scale integrated circuit wherein insulated gate field-effect transistors are arrayed in the shape of a matrix on a single semiconductor substrate, an improvement is provided comprising the fact that some of the transistors are of the depletion type, while others of the transistors are of the enhancement type, so that a very large number of contact holes which are otherwise required for electrical connection between aluminum wiring and the drain regions are unnecessary. This permits the density of integration of the integrated circuit to be raised.

REFERENCES:
patent: 3775191 (1973-11-01), McQuhae
patent: 3846768 (1974-11-01), Krick
patent: 3865651 (1975-02-01), Arita

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