Stock material or miscellaneous articles – Self-sustaining carbon mass or layer with impregnant or...
Patent
1980-12-17
1982-10-12
Dixon, Jr., William R.
Stock material or miscellaneous articles
Self-sustaining carbon mass or layer with impregnant or...
51307, 51309, 75200, 75201, 75204, 75214, 75226, 264 60, 264 65, 2642711, 264299, 264332, 428145, 428446, 428698, B32B 900, B24D 302, C22C 104, B32B 904
Patent
active
043539637
ABSTRACT:
A process for simultaneously cementing diamond fines together and bonding the cemented diamonds to a silicon-silicon carbide composite is described. During the process the silicon-silicon-carbide composite furnishes silicon for the cementing and bonding function and the silicon-silicon carbide composite provides for the structural stability of the resulting article. The process comprises placing a quantity of diamond powder and a mass of silicon-silicon carbide composite adjacent to each other, packing such material to form a stabilized geometry, heating the stabilized geometry in an inert atmosphere, and simultaneously applying pressure thereto.
REFERENCES:
patent: 4120731 (1978-10-01), Hillis et al.
patent: 4141948 (1979-02-01), Laskow et al.
patent: 4167399 (1979-09-01), Lee et al.
patent: 4168957 (1979-09-01), Lee et al.
patent: 4173614 (1979-11-01), Lee et al.
patent: 4220455 (1980-09-01), St. Pierre et al.
patent: 4241135 (1980-12-01), Lee et al.
Lee Minyoung
Szala Lawrence E.
Davis Jr. James C.
Dixon Jr. William R.
General Electric Company
MaLossi Leo I.
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