1977-08-08
1979-03-20
Clawson, Jr., Joseph E.
357 41, 357 52, H01L 2978
Patent
active
041457005
ABSTRACT:
A power metal-oxide-semiconductor field-effect transistor (MOSFET) having high switching speed capabilities is shown. The high switching speed is facilitated by narrow channel length which is defined by the difference in lateral diffusion junctions of the P substrate and N source diffusions. The high current capability is produced by the large channel width. The high voltage capability is caused by the use of FET substrate P diffusions designed to be located apart from one another by very small distances. Unbiased or floating P diffusions are designed to flank the outer peripheries of P substrate diffusions. The close proximity of the adjacent P substrate diffusions reduces the electric field in the curvature portion of the P diffusion junctions in the N.sup.- silicon body at their inner peripheries, while the presence of the unbiased P diffusions at the appropriate distance from the outer peripheries of P substrate diffusions reduces the electric field in the curvature region of the P substrate diffusions at their outer peripheries. The N silicon body forms the drain region.
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patent: 3926694 (1975-12-01), Cauge et al.
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patent: 4072975 (1978-02-01), Ishitani
Clawson Jr. Joseph E.
International Business Machines - Corporation
Saile George O.
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