Semiconductor integrated circuit device

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364490, 364489, 364488, 357 42, 357 43, 307454, 307446, G06F 1560

Patent

active

051193140

ABSTRACT:
A semiconductor integrated circuit device which can operate at high speed and involves a low power consumption and a high integration density, wherein a Bi-CMOS basic cell and a Bi-CMOS macro cell are employed to define a critical path and a CMOS basic cell and a CMOS macro cell are employed for a portion of the device other than the critical path.

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patent: 4839821 (1989-06-01), Murakata

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