Method of forming fine pattern of thin, transparent, conductive

Details Method of forming fine pattern of thin, transparent, conductive Method of forming fine pattern of thin, transparent, conductive

1974-09-12

1976-05-18

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

313370, C23C 1500

Patent

active

039576094

ABSTRACT:
A thin film mask having a predetermined pattern is formed directly on a thin, transparent, conductive SnO.sub.2 film formed on a dielectric substrate in order to form a fine pattern of the transparent, conductive film and that part of the transparent conductive film which is not covered by the mask is etched away through the bombardment with ions of gas accelerated under the influence of an RF electric field. Suitable masks include photoresists, aluminum, chromium, and manganese.

REFERENCES:
patent: 3436327 (1969-04-01), Shockley
patent: 3642548 (1972-02-01), Eger
patent: 3649503 (1972-03-01), Terry
patent: 3748246 (1973-07-01), Goell
patent: 3791952 (1974-02-01), Labuda et al.
patent: 3836446 (1974-09-01), Tiefert
patent: 3847776 (1974-11-01), Bourdon et al.
patent: 3873361 (1975-03-01), Franco et al.

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