Vertical channel field effect transistor

Details Vertical channel field effect transistor Vertical channel field effect transistor

1987-01-12

1988-04-05

Ozaik, George T.

Fishing, trapping, and vermin destroying

357 55, 437187, H01L 2120

Patent

active

047359188

ABSTRACT:
A semiconductor device component, and process for preparation thereof, wherein current flowing in a vertical channel of semiconductor material is controlled by metallic gates laterally disposed on either side of the channel. Insulator layers are positioned overlying and underlying each gate, to reduce parasitic capacitance which would otherwise be present if the metallic gate material were in contact with overlying and underlying semiconductor material. Reduction of the capacitance allows the use of wider gate strips, thereby reducing the series resistance to an external gate contact. These changes significantly improve the high-power, high-frequency performance of the device component, as compared with permeable base transistors.

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High Technology, Sep. 1983, pp. 55-59, "The Route to 3-D Chips" by John H. Douglas.

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