Thyristor device with self-protection against breakover turn-on

Details Thyristor device with self-protection against breakover turn-on Thyristor device with self-protection against breakover turn-on

1976-11-01

1978-03-14

Miller, Jr., Stanley D.

357 20, 357 38, 357 52, 357 55, H01L 2990

Patent

active

040794032

ABSTRACT:
Self-protection against breakover turn-on failure is achieved for a thyristor by providing for adjustment of the curvature of the planar junction termination in the gate region. In addition, breakdown of the outer edge of the device at the junctions is maintained at a relatively higher breakdown voltage by the techniques of beveling, floating field rings or by etching around the cathode emitter region.

REFERENCES:
patent: 3408545 (1968-10-01), De Cecco et al.
patent: 3562610 (1971-02-01), Stehney
patent: 3566212 (1971-02-01), Svedberg
patent: 3771029 (1973-11-01), Burtscher et al.
patent: 3774085 (1973-11-01), Platzoeder et al.
Y. Kao et al., "High Voltage Planar P-N JCNS," Proc. IEEE, vol. 55, #8, Aug. 1967, pp. 1409-1414.
S. Sze, "Physics of Semiconductor Devices," Wiley-Interscience, .COPYRGT. 1969, pp. 85, 119-126.

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