Patent
1991-07-03
1992-06-02
Prenty, Mark
357 45, 357 71, 357 41, 357 67, H01L 2904, H01L 2710, H01L 2348, H01L 2702
Patent
active
051191652
ABSTRACT:
A semiconductor integrated circuit device which comprises a substrate, a first continuous longitudinal diffusion layer formed in the substrate and a second continuous longitudinal diffusion layer constitutes source areas of a plurality of MOS transistors. The second diffusion layer constitutes drain areas of the transistors. The device further comprises a first polycide layer formed on and along each of the first and second diffusion layers in contact therewith and a second polycide layer for constituting a gate electrode of each of the transistors. The second polycide layer is formed on and transversing the first polycide layers in a direction perpendicular to the first and second diffusion layers. An insulation layer is interposed between the first and second polycide layers.
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Prenty Mark
Ricoh & Company, Ltd.
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