Patent
1991-05-29
1992-06-02
Wojciechowicz, Edward J.
357 234, 357 13, 357 86, H01L 2702
Patent
active
051191598
ABSTRACT:
A lateral DMOSFET device with a small on resistance and a small device area. The device includes a high concentration first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type provided on one side of the first semiconductor region; a base region of the first conductivity type formed inside the second semiconductor region, which is reaching to the first semiconductor region; a high concentration source region of the second conductivity type formed inside the base region; a channel region of the first conductivity type formed inside the second semiconductor region around the source region; a high concentration drain region of the second conductivity type formed inside the second semiconductor region and outside the base region; a source electrode connected to the source region; a gate electrode provided over the source region and the channel region; a drain electrode connected to the drain region; and a base electrode, provided on another side of the first semiconductor region, for maintaining a voltage level of the base region at constant level.
REFERENCES:
patent: 5065213 (1991-11-01), Frisina et al.
Nissan Motor Co,. Ltd.
Wojciechowicz Edward J.
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