Patent
1988-09-01
1992-06-02
Jackson, Jr., Jerome
357 32, 357 52, 357 54, H01L 2714, H01L 2934
Patent
active
051191563
ABSTRACT:
A photo-detecting element is covered with a passivation film having an uneven surface to avoid multi-reflection for the monochromatic incident light. The uneven film transmits the same intensity of incident light even if the mean thickness of uneven film is not constant over the entire surface of a semiconductor substrate.
REFERENCES:
patent: 4277793 (1981-07-01), Webb
patent: 4555622 (1985-11-01), Glass et al.
patent: 4665422 (1987-05-01), Hirao et al.
Kawahara Yukito
Machida Satoshi
Mukainakano Hiroshi
Adams Bruce L.
Jackson, Jr. Jerome
Seiko Instruments Inc.
Wilks Van C.
LandOfFree
Photo-detecting semiconductor device with passivation suppressin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photo-detecting semiconductor device with passivation suppressin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo-detecting semiconductor device with passivation suppressin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2232902