Quasi-one-dimensional channel field effect transistor having gat

Details Quasi-one-dimensional channel field effect transistor having gat Quasi-one-dimensional channel field effect transistor having gat

1989-11-03

1992-06-02

Hille, Rolf

357 4, 357 16, H01L 2980, H01L 2712, H01L 29161

Patent

active

051191512

ABSTRACT:
A quasi-one-dimensional channel field effect transistor is suitable for an ultra high speed operation due to reduction in scattering, and comprises a quantum well structure for producing a two dimensional carrier gas, a etching stopper layer formed on the quantum well structure for providing a heterojunction, and an electron supplying structure formed on the etching stopper layer shaped in a mesa array for dividing the two dimensional carrier gas into quasi-one-dimensional quantum wires and a metal gate electrode having a top surface tracing the top surfaces of the mesa array, in which the quantum well structure has a quantum well capable of accumulating a large amount of carrier gas, so that the etching stopper layer and the electron supplying structure are formed of compound semiconductor materials in the same compound system but different in the molar fraction of one of the compositional element for imparting a large selectivity to an etchant used for the mesa array.

REFERENCES:
patent: 4733282 (1988-03-01), Chang et al.
patent: 4796068 (1989-01-01), Katayama et al.

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