Method of diffusing impurities in semiconductor bodies

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148186, H01L 21223

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active

041244176

ABSTRACT:
A method of diffusing doping impurities in semiconductor bodies by the transfer in the vapor phase from a source in a condensed form.
The diffusion space is of the "half-open type" and a cold point is maintained in it at the end opposite to the location of the source which is placed near a restricted passage to the atmosphere surrounding the space.

REFERENCES:
patent: 3131099 (1964-04-01), Constantakes
patent: 3573116 (1971-03-01), Cohen
patent: 3764414 (1973-10-01), Blum et al.

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