Process for forming isolation trench in ion-implanted region

Details Process for forming isolation trench in ion-implanted region Process for forming isolation trench in ion-implanted region

1988-11-09

1992-06-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 65, 437 67, H01L 2176

Patent

active

051186365

ABSTRACT:
A process for manufacturing a trench isolation device is mainly comprised of steps of forming a trench in an impurity ion doped region in a semiconductor substrate after the impurity ion doped region has been formed by ion implantation. The ion energy for the ion implantation is charged from a low energy level to a high energy level, or vice versa, in order to provide a uniform vertical doping profile or a graded vertical doping profile. By this method, field dope layers completely surround the trench in the trench isolation device.

REFERENCES:
patent: 4534824 (1985-08-01), Chen

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