Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1993-02-09

1994-06-21

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053234120

ABSTRACT:
A semiconductor laser device comprises a III-V group p-type compound semiconductor substrate, a mesa-shaped narrow and straight multilayer double heterostructure having an active layer therein and blocking layers formed on the lateral sides of said double heterostructure in a pnp layer arrangement, and the n-type layer of said blocking layers is kept away from the lateral sides of the double heterostructure having an active layer.

REFERENCES:
patent: 4692206 (1987-09-01), Kaneiwa et al.
patent: 4730329 (1988-03-01), Yoshida et al.
patent: 4779282 (1988-10-01), Ng
patent: 4799227 (1989-01-01), Kaneiwa et al.
patent: 4935936 (1990-06-01), Nelson et al.
patent: 4972238 (1990-11-01), Tanaka
patent: 4977568 (1990-12-01), Yamamoto et al.

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