Via filling by single crystal aluminum

Details Via filling by single crystal aluminum Via filling by single crystal aluminum

1992-01-07

1993-11-16

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437105, 437203, 437194, 156DIG61, 156DIG103, 156610, H01L 21285, H01L 21283

Patent

active

052623610

ABSTRACT:
A method for forming single crystal aluminum films 14 on the surface of a substrate 12 (e.g. silicon {111} or Si{111}) is presented, comprising the steps of cleaning the substrate, then maintaining the substrate at certain temperature and pressure conditions while electrically neutral aluminum is deposited by a vacuum evaporation technique. Novel structures wherein single crystal aluminum contacts 20 fill via holes 18 in insulating layers 16 are presented. Novel structures wherein a single crystal aluminum film 14 exists on a substrate comprised of more than one crystalline material 12, 22 are presented.

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