Static I.sup.2 L ram

Details Static I.sup.2 L ram Static I.sup.2 L ram

1978-12-11

1980-09-09

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 92, 357 50, 365155, 365156, 365179, 365181, 365188, G11C 1140, H01L 2704

Patent

active

042219779

ABSTRACT:
A unique topography of I.sup.2 L bipolar semiconductor elements provides Read-Write Random Access Memory (RAM) with very high packing density, low cost, and good power and speed characteristics and with a very simple metallization pattern.

REFERENCES:
patent: 3643235 (1972-02-01), Berger et al.
patent: 3801967 (1974-04-01), Berger et al.
patent: 4021786 (1977-05-01), Peterson
patent: 4032902 (1977-06-01), Herndon
patent: 4112511 (1978-09-01), Heald
patent: 4158237 (1979-06-01), Wiedmann
Wiedmann, IBM Tech. Discl. Bulletin, vol. 21, No. 1, Jun. 1978, pp. 231-232.
Wiedmann, IBM Tech. Discl. Bulletin, vol. 14, No. 6, Nov. 1971, pp. 1721-1722.

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