Impurity doping method with adsorbed diffusion source

Details Impurity doping method with adsorbed diffusion source Impurity doping method with adsorbed diffusion source

1994-02-18

1996-06-18

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437939, 437950, H01L 21225

Patent

active

055277330

ABSTRACT:
For effecting impurity doping, a chemically active semiconductor surface is covered with an adsorption layer composed of an impurity element which forms a dopant in the semiconductor or composed of a compound containing the impurity element. Thereafter, solid phase diffusion is effected using the adsorption layer as an impurity diffusion source so as to form an impurity-doped region having a desired density profile in the depth direction.

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