Method of making thin oxide portions consisting of gate and tunn

Details Method of making thin oxide portions consisting of gate and tunn Method of making thin oxide portions consisting of gate and tunn

1994-10-26

1996-06-18

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 30, 437979, H01L 218247

Patent

active

055277284

ABSTRACT:
A method for forming thin oxide portions in electrically erasable and programmable read-only memory cells, including the use of the enhanced oxidation effect and the lateral diffusion of heavy doping, for obtaining a tunnel portion whose dimensions are smaller than the resolution of the photolithographic method used.

REFERENCES:
patent: 4945068 (1990-07-01), Sugaya
patent: 4957877 (1990-09-01), Tam et al.
patent: 5198381 (1993-03-01), Chang et al.
patent: 5215934 (1993-06-01), Tzeng
patent: 5273923 (1993-12-01), Chang et al.
Patent Abstracts of Japan, vol. 10, No. 384 (E-466) (2441) JP-A-61174774 (Toshiba Corp) Aug. 6, 1986.

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