Read only memory circuit

Static information storage and retrieval – Floating gate – Particular biasing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365200, 365177, 365104, 365182, 3072021, 307468, 307581, 307584, 357 235, 357 54, H01L 2978, H03K 513, G11C 1134, G11C 1700

Patent

active

047259809

ABSTRACT:
A ROM circuit is used in place of a conventional fuse type ROM which is incorporated in a semiconductor integrated circuit network together with other circuit blocks on a chip. The ROM circuit comprises a first transistor having a control and a floating gate and a depletion type second transistor having a gate formed as an extension of the floating gate. The second transistor outputs a high level control signal if hot electrons have been accumulated on the floating gate of the first transistor by the application of a predetermined high level input signal to the control gate thereof, and outputs a low level signal when the high level input signal has not been provided to the control gate. The first transistor is freed from a soft write problem because it is separated from a voltage source in the read mode.

REFERENCES:
patent: 4245165 (1981-01-01), Hoffman
patent: 4375087 (1983-02-01), Wanlass
patent: 4583201 (1986-03-01), Bertin et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Read only memory circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Read only memory circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read only memory circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2224757

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.