Semiconductor device of silicon on sapphire structure having FET

Details Semiconductor device of silicon on sapphire structure having FET Semiconductor device of silicon on sapphire structure having FET

1980-03-27

1983-07-26

Munson, Gene M.

357 23, 357 42, H01L 2702, H01L 2978

Patent

active

043957269

ABSTRACT:
A semiconductor device has a plurality of field effect transistors on an insulating substrate. A semiconductor film constituting at least one of the plurality of field effect transistors is thinner than a semiconductor film of the other field effect transistor or transistors.

REFERENCES:
patent: 3745072 (1973-07-01), Scott
patent: 4097314 (1978-06-01), Schlesier et al.
Hsu, "Electron Mobility in SOS Films", IEEE Trans. Electron Devices, vol. ED-25 (8/78) pp. 913-916.

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