1985-11-18
1988-02-16
Edlow, Martin H.
357 13, 357 30, 357 16, H01L 2712
Patent
active
047258705
ABSTRACT:
A photodetector, comprising a Ge.sub.x Si.sub.1-x superlattice region between two silicon cladding layers in which the Ge.sub.x Si.sub.1-x layers absorb light, is described.
REFERENCES:
patent: 3626257 (1971-12-01), Esoki
patent: 4212019 (1980-07-01), Wataze
patent: 4616241 (1986-10-01), Biefeld
Capasso et al., International Electron Device Meeting Wash. D.C., (7-9 Dec. 1981), p. 284-IEDM 81.
Bean John C.
Luryi Sergey
Pearsall Thomas P.
American Telephone and Telegraph Company AT&T Bell Laboratories
Edlow Martin H.
Laumann Richard D.
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