Phosphorous-nitrogen based glasses for the passivation of III-V

Compositions: ceramic – Ceramic compositions – Glass compositions – compositions containing glass other than...

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357 2, 357 2315, 357 61, 357 73, 501 40, H01L 2724, H01L 2978, H01L 29161, H01L 2934

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045463727

ABSTRACT:
A semiconductor article having a phosphorous nitrogen passivating film thereon. Particularly, an insulated gate field effect transistor device operating in the inversion mode, wherein the device comprises an essentially oxygen-free, amorphous, phosphorous-nitrogen glass passivating film deposited on a III-V semiconductor material.

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Miller and Shaw, Phosphorus-Nitrogen Compounds, Part III-Phosphams, Jrnl of Chem. Soc., Jun., 1963, p. 3233.
Vebrek and Roos, Dielectric Properties of Phosphorus Nitride Films, Jrnl of Chem. Solids, 1976, vol. 37, p. 554.
Vebrek, Iqbal, Brunner and Scharli, Preparation and Properties of Amorphous Nitride Prepared in a Low-Pressure Plasma, Philosophical Magazine B, 1981, vol. 43, No. 3, 527-547.

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