Light-activated amplified gate bi-directional thyristor

Details Light-activated amplified gate bi-directional thyristor Light-activated amplified gate bi-directional thyristor

1983-10-25

1985-10-08

Clawson, Jr., Joseph E.

357 20, 357 30, 357 55, 357 86, H01L 29747

Patent

active

045463697

ABSTRACT:
A light-activated bi-directional thyristor of a planar structure having P type base layers for first and second thyristors in a light receiving section, the P type base layers being separated from each other by an N type base layer. An N type emitter layer is formed at that part of the P type base layer for the second thyristor which is located on the side of the light receiving section. A first auxiliary electrode is laminated to the N type emitter layer to form an amplifying gate section. A second auxiliary electrode is formed on the P type base layer which is located opposite the light receiving section. On-current of the amplifying gate section is supplied to a shorted emitter in the second thyristor, through a connector for electrically connecting the first and second auxiliary electrodes.

REFERENCES:
patent: 4142201 (1979-02-01), Sittig et al.
patent: 4216487 (1980-08-01), Konishi et al.
patent: 4286279 (1981-08-01), Hutson
patent: 4396932 (1983-08-01), Alonas et al.
patent: 4430663 (1984-02-01), D'Altroy et al.

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