Method of estimating lifetime of floating SOI-MOSFET

Details Method of estimating lifetime of floating SOI-MOSFET Method of estimating lifetime of floating SOI-MOSFET

1997-11-28

2000-06-06

Stamber, Eric W.

Data processing: measuring, calibrating, or testing

Measurement system in a specific environment

Electrical signal parameter measurement system

702117, 324769, 438 14, 438 17, G01R 3126

Patent

active

06073082&

ABSTRACT:
In a method of estimating the lifetime of a floating SOI-MOSFET, constants A and B, stress condition dependency Id.sup.t (S) of a drain current and stress condition dependency Isub(S) of a substrate current in a body-fixed SOI-MOSFET, and stress condition dependency Id.sup.f (S) of a drain current in the floating SOI-MOSFET are obtained from experiment to estimate lifetime .tau..sup.f (S) from the following equation: ##EQU1## where W.sup.f represents a known channel width of the floating SOI-MOSFET.

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