Thin film transistor panel having an extended source electrode

Details Thin film transistor panel having an extended source electrode Thin film transistor panel having an extended source electrode

1996-11-25

1997-09-16

Fahmy, Wael

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349139, G02F 11343

Patent

active

056686501

ABSTRACT:
A thin film transistor panel comprises a substrate, pixel electrodes arranged on the substrate in a matrix form, TFTs each having a source electrode connected to the associated pixel electrode, gate lines and data lines, both connected to the associated TFTs. An auxiliary electrode connected to the associated gate line and a capacitance compensation electrode are provided in such a manner as to cancel a change in gate-source capacitance caused by an alignment error in the manufacturing process. The capacitance compensation electrode is shifted by the same amount as the shift of the source electrode. When the facing area between the gate electrode and source electrode increases (or decreases) due to an alignment error in the manufacturing process, the facing area between the auxiliary electrode and capacitance compensation electrode decreases (or increases). Therefore, the total gate-source capacitance or the sum of the capacitance between the facing portions of the gate electrode and source electrode and the capacitance between the facing portions of the auxiliary electrode and capacitance compensation electrode is constant regardless of a variation in the position of the source electrode.

REFERENCES:
patent: 5285302 (1994-02-01), Wu

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