Transparent conductive film having areas of high and low resisti

Details Transparent conductive film having areas of high and low resisti Transparent conductive film having areas of high and low resisti

1981-12-30

1983-07-26

Lusignan, Michael R.

Stock material or miscellaneous articles

Composite

Of inorganic material

204192N, 427 38, 428702, C23C 1500, B05D 306

Patent

active

043954677

ABSTRACT:
A method of forming areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide is disclosed. The film is selectively ion implanted with protons and then annealed to lower the resistivity in the non-implanted portion.

REFERENCES:
patent: 4177093 (1979-12-01), Feng et al.
patent: 4198246 (1980-04-01), Wu
patent: 4229502 (1980-10-01), Wu et al.
patent: 4336277 (1982-06-01), Bunshah et al.

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