Process for the fabrication of a gallium arsenide grating solar

Details Process for the fabrication of a gallium arsenide grating solar Process for the fabrication of a gallium arsenide grating solar

1986-10-23

1988-02-16

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136255, 136262, 357 30, H01L 3118, H01L 3106

Patent

active

047255595

ABSTRACT:
A photovolatic device is disclosed comprising a p-type conductive substrate, a sandwich of p-type Al.sub.y Ga.sub.(1-y) As bottom layer/p-type GaAs base layer/p-type Al.sub.y Ga.sub.(1-y) As top layer (wherein the surface area of the p-type Al.sub.y Ga.sub.(1-y) As top layer is less than the surface area of the p-type GaAs base layer, a layer of n.sup.+ -type GaAs emitter contacting the surface of the p-type GaAs base layer (wherein the surface area of the layer of n.sup.+ -type GaAs emitter is less than one-tenth the surface area of the p-type GaAs base layer), an insulating layer contacting the surface of the p-type Al.sub.y Ga.sub.(1-y) As top layer, and means for forming electrical contacts to the substrate and the incident surface of the n.sup.+ -type GaAsemitter layer.

REFERENCES:
V. G. Weiser et al, Conference Record, 18th IEEE Photovolatic Specialists Conf. (1985), Published Apr. 1986, pp. 100-104.
R. P. Gale et al, Conference Record, 17th IEEE Photovoltaic Specialists Conf. (1984), pp. 1422-1425.

Affiliated with

Also associated with

Rating

Process for the fabrication of a gallium arsenide grating solar does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the fabrication of a gallium arsenide grating solar , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the fabrication of a gallium arsenide grating solar will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2221039