Method of making supersaturated rare earth doped semiconductor l

Details Method of making supersaturated rare earth doped semiconductor l Method of making supersaturated rare earth doped semiconductor l

1992-08-31

1994-06-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437110, 437959, H01L 21205

Patent

active

053228138

ABSTRACT:
A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor layers, supersaturated in the rare earth, are produced. The preferred rare earth is erbium and the preferred precursors for depositing erbium by CVD are erbium hexafluoroacetylacetonate, acetylacetonate, tetramethylheptanedionate and flurooctanedionate. The process may be used to produce optoelectronic devices comprising a silicon substrate and an erbium-doped epitaxial silicon film.

REFERENCES:
patent: 3661637 (1972-05-01), Sirtl
patent: 4385946 (1983-05-01), Finegan et al.
patent: 4618381 (1986-10-01), Sato et al.
patent: 4800173 (1989-01-01), Kanai et al.
patent: 5082798 (1992-01-01), Arimoto
patent: 5141894 (1992-08-01), Bisaro et al.
Applied Physics Letter 43 (10), Nov. 1983, p. 943 H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann "1.54-.mu.m luminescence of erbium-implanted III-V semiconductors and silicon."
Applied Physics Letter 46 (4), Feb. 1985 p. 381 H. Ennen, G. Pomrenke, A. Axmann, K. Eisele, W. Haydl, and J. Schneider "1.54-.mu.m electroluminesence of erbium-doped silicon grown by molecular beam epitaxy."
Applied Physics Letter 50 (2), Jan. 1987 p. 113 B.S. Meyerson, F. K. LeGoues, T. N. Nguyen, and D. L. Harame "Nonequilibrium boron doping effects in low-temperature epitaxial silicon films."
Japenese Journal of Applied Physics vol. 29, No. 4, Apr. 1990, pp. L524-L526 P. N. Favennec, H. L'Haridon, D. Moutonnet, M. Salvi and M. Gauneau "Optical Activation of Er.sup.3 + Implanted in Silicon by Oxygen Impurities."
Applied Physics letter 58 (24), Jun. 1991 p. 2797 D. J. Eaglesham. J. Michel, E. A. Fitzgerald, D. C. Jacobson, J. M. Poate, J. L. Benton, A. Polman, Y.-H. Xie, and L. C. Kimerling "Microstructure of erbium-implanted Si."
J. Applied Physics 70 (5), Sep. 1991 p. 2667 J. L. Benton, J. Michel, L. C. Kimerling, D. C. Jacobson, Y.-H. Xie, D. J. Eaglesham, E. A. Fitzgerald, and J. M. Poate "The electrical and defect properties of erbium-implanted silicon."
J. Applied Physics 70 (5), Sep. 1991 p. 2672 J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J. M. Poate, and L. C. Kimerling "Impurity enhancement of the 1.54-.mu.m Er.sup.3 + luminescence in silicon."
Journal of Crystal Growth 104 (1990) pp. 815-819 J. Weber, M. Moser, A. Stapor, F. Scholz, G. Bohnert, A. Hangleiter, A. Hammel, D. Wiedmann, and J. Weidlein "Movpe Grown InP:Er Layers Using Er(MeCp).sub.3 and Er(IpCp).sub.3 ."
Journal of Crystal Growth 93 (1988) pp. 583-588 K. Uwai, H. Nakagome, and K. Takahei "Growth of Erbium-Doped GaAs and InP by Metalorganic Chemical Vapor Deposition Using Er(CH.sub.3 C.sub.5 H.sub.4).sub.3 and Er(C.sub.5 H.sub.5).sub.3."

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