Semiconductor light-emitting device and method of fabricating th

Details Semiconductor light-emitting device and method of fabricating th Semiconductor light-emitting device and method of fabricating th

1997-05-21

2000-06-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 3085

Patent

active

060728191

ABSTRACT:
A structure consisting of a substrate and a gallium nitride based compound semiconductor formed on the substrate includes a light-emitting layer forming portion consisting at least of a semiconductor layer of a first conductivity type (an n-type cladding layer) and a semiconductor layer of a second conductivity type (a p-type cladding layer); a current blocking layer of the first conductivity type, which is formed within a semiconductor layer of the second conductivity type and in close proximity to the light-emitting layer forming portion, and a portion of which is removed in a region where a current flow, and electrodes connected to the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, respectively. In a semiconductor light-emitting device using GaN based compound semiconductors, this structure allows the current blocking layer for defining a current injection region to be formed in close proximity to the light-emitting layer, thus reducing leakage current into regions outside a pattern.

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patent: 5585649 (1996-12-01), Ishikawa et al.
patent: 5587335 (1996-12-01), Mori et al.
patent: 5732098 (1998-03-01), Nistani et al.
patent: 5740192 (1998-04-01), Hatano et al.

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