Dynamic RAM having word line voltage intermittently boosted in s

Details Dynamic RAM having word line voltage intermittently boosted in s Dynamic RAM having word line voltage intermittently boosted in s

1998-02-13

2000-09-05

Tran, Andrew Q.

Static information storage and retrieval

Addressing

Sync/clocking

365149, 36523006, 36523003, 36518909, 36518911, 365226, 365201, G11C 818

Patent

active

061153192

ABSTRACT:
A bootstrap circuit is provided for a word line selector for setting word lines connected with dynamic memory cells at a select level corresponding to a first voltage and a nonselect level corresponding to a second voltage. The bootstrap circuit generates a bootstrap voltage which is given a difference substantially equal to the threshold voltage of address select MOSFETs with respect to the high level of bit lines connected with the memory cells, and feeds the bootstrap voltage to the selected word lines. The bootstrap circuit is activated in synchronism with a clock signal at a timing corresponding to an action mode designated by a command in an SDRAM before a precharge action, thereby changing the select level of the word lines from the first voltage to the bootstrap voltage.

REFERENCES:
patent: 5673233 (1997-09-01), Wright et al.
patent: 5687134 (1997-11-01), Sugawara et al.

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