System and method for detecting particles produced in a process

Details System and method for detecting particles produced in a process System and method for detecting particles produced in a process

1999-10-06

2000-09-05

Pham, Hoa Q.

Optics: measuring and testing

By particle light scattering

382145, 356339, G01N 2100

Patent

active

061151203

ABSTRACT:
Particles generated within a semiconductor wafer process chamber are monitored by emitting a rastered laser beam into the process chamber and detecting a two-dimensional image of scattered radiant energy within the process chamber. A video frame representing a matrix array of pixel intensities is produced and processed by a processor. The processor receives first and second video frames, the first frame representing a matrix array of pixels of a background image of the process chamber before a wafer processing is started and the second frame representing a matrix array of corresponding pixels of a target image of the process changer after a wafer processing is started. Differential intensities between the pixels of the background image and corresponding pixels of the target image are detected and a decision is made on the detected intensities to produce an output signal representing presence or absence of the particles.

REFERENCES:
patent: 5946092 (1999-08-01), DeFreez et al.
patent: 5978078 (1999-11-01), Salamati-Saradh et al.
G. Selwyn, "Plasma Particulate Contamination Control. I. Transport and Process Effects", Journal of Vacuum Science and Technology, B, vol. 9, No. 6, Nov./Dec. 1991, pp. 3487-3492.
G. Selwyn et al., "Particle Contamination in a Helicon Plasma Etching Tool", Journal of Vacuum Science and Technology, A, vol. 14, No. 2, Mar./Apr. 1996, pp. 649-654.

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