Semiconductor device having a transistor with increased current

Details Semiconductor device having a transistor with increased current Semiconductor device having a transistor with increased current

1984-12-27

1987-03-31

Edlow, Martin H.

357 20, 357 48, 357 38, 357 88, H01L 2702

Patent

active

046546880

ABSTRACT:
A semiconductor device having a lateral transistor consisting of a semiconductor substrate, a first semiconductor region, and a second semiconductor region operatively functioning as a collector, a base, and an emitter of a transistor. By providing a high concentration region in the first semiconductor region, the base width of the transistor is narrowed. In a PROM, a reverse current preventing transistor with such a narrowed base width in each memory cell can be driven by a decoder/driver with a lowered driving power consumption.

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patent: 4118250 (1978-10-01), Horng et al.
patent: 4275408 (1981-06-01), Yukimoto
patent: 4458158 (1984-07-01), Mayrand
Stone, "I.sup.2 L: A Comprehensive Review of Techniques and Tech.", Solid State Technology, Jun. 1977, pp. 42-48.

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