Electron-beam exposure apparatus and exposure method

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2504911, H01J 37302

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active

061147087

ABSTRACT:
An electron-beam exposure apparatus, comprising an electron gun for emitting an electron beam, a first aperture for shaping the electron beam in a prescribed manner, and a second aperture, which is provided with an opening for varying the cross-sectional shape of the electron beam passing through the first aperture. The second aperture is provided with a variable-shape opening, partial one-shot exposure openings, beam spot dimension correction openings, and deflectors for deflecting the electron beam passing through the first aperture, said deflectors being disposed between the first and second apertures.

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patent: 5478698 (1995-12-01), Rostoker et al.
patent: 5886357 (1999-03-01), Kojima
Nakayama et al., "Electron-beam cell projection lithography: A new high-throughput electron-beam direct-writing technology using a specially tailored Si aperture", J. Vac. Sci. Technol., vol. B8, No. 6, 1836-1840 (1990).

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