Plasma vapor deposition film forming apparatus

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118 501, 118719, 427 39, C23L 1308

Patent

active

045453284

ABSTRACT:
In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and reaction gas supply pipes having substantially equal supply resistance radially extend to the reactors from a gas reservoir located at the center of the circle.

REFERENCES:
patent: 4226208 (1980-10-01), Nishida et al.
patent: 4369730 (1983-01-01), Izu et al.
patent: 4466380 (1984-08-01), Jansen et al.
patent: 4482419 (1984-11-01), Tsukada et al.

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