Process for fabricating a lateral transistor having self-aligned

Details Process for fabricating a lateral transistor having self-aligned Process for fabricating a lateral transistor having self-aligned

1983-08-29

1985-10-08

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29591, 148187, H01L 2122, H01L 21265

Patent

active

045451133

ABSTRACT:
A lateral transistor structure having a self-aligned base and base contact is provided, together with a method for fabricating such a structure in which the base width is controlled by lateral diffusion of an impurity through a polycrystalline silicon layer. The resulting zone of impurity changes the etching characteristics of the layer and permits use of a selective etchant to remove all of the layer except the doped portion. The doped portion may then be used as a mask to define the base electrical contact, which in turn is used to provide a self-aligned base for the transistor. Dopants introduced on opposite sides of the base electrical contact create the emitter and collector.

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