Method of simulating hot carrier deterioration of a P-MOS transi

Details Method of simulating hot carrier deterioration of a P-MOS transi Method of simulating hot carrier deterioration of a P-MOS transi

1995-06-05

1997-03-25

Teska, Kevin J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

Frequency of cyclic current or voltage

324765, 324769, 324768, G01R 3126, G06F 9455

Patent

active

056153775

ABSTRACT:
A method of simulating hot carrier deterioration of a P-MOS transistor uses the following formulas (A1), (A2), (A3) and (A4) or the following formulas (A1), (A5), (A3) and (A4) (A2), and coefficients A, n, B and m are determined by a preliminary measuring experiment, whereby a transistor lifetime r can be estimated:

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patent: 5525829 (1996-06-01), Mistry
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